The SISC is a workshop-style conference that provides a forum for device engineers, solid state physicists, and materials scientists to discuss topics of common interest, formally through invited and contributed presentations, and informally during poster and rump sessions.

The SISC is sponsored by the IEEE Electron Device Society and is held right after IEDM.

This year, SISC will be held as a fully in-person event.

The program includes talks and poster presentations (theory and experiment) on the role of materials, interfaces, and defects on performance and reliability of:

• Logic Devices for future technology nodes (Nanosheet, CFET, VFET, etc.),
• Steep Sub-Threshold slope logic devices (Tunnel FETs, etc.),
• Insulators on High-Mobility substrates (SiGe, Ge, etc.),
• Low Dimensional materials and devices,
• Non-Volatile Memory for AI / In-Memory / Neuromorphic Compute (ReRAM, PCM, ECRAM, etc.),
• Ferroelectric devices (FeFET, FeRAM, etc.),
• Amorphous Oxide Semiconductor channel transistors (IGZO, etc.),
• Monolithic and/or Heterogeneous ICs (BEOL, interconnects, packaging, etc.),
• Wide Bandgap semiconductor power devices (SiC, GaN, β-Ga₂O₃, etc.),
• Materials and devices for Qubits in Quantum Computing and Cryogenic Electronics,

including machine learning / materials discovery techniques developed and used for their study.

2024 Confirmed Technical Invited Talks

The technical program will be complemented by Invited Presentations from both industry and academia.

• Dr. Sandy Liao, TSMC, Taiwan
  CFET Technology for Future Logic Scaling
• Prof. Saptarshi Das, Penn State U., USA
  Monolithic 3D Integration of Functionally Diverse 2D Devices
• Dr. Daewon Ha, Samsung, S. Korea
  Emerging Memory Landscape
• Prof. Sumeet Gupta, Purdue U., USA
  Variability in Hafnia-based Ferroelectrics: A Phase-Field Simulation based Perspective
• Dr. Chris Neumann , Intel, USA
  Hafnia-Based FeRAM for High-Density, High-Speed Embedded Memory
• Dr. Adrian Chasin, imec, Belgium
  IGZO Thin-Film Transistor Reliability: the Last Standing Roadblock for Memory Applications
• Prof. Siddharth Rajan, The Ohio State U., USA
  Device Engineering for High-Performance Gallium Oxide Electronics

Invited Honorary Lecture

• Prof. Andre Stesmans, KU Leuven, Belgium
  Electron Spin Resonance as Powerful Spectroscopy for Assessment of Point Defects in Semiconductor/Insulator Structures: Some Historical Reflections on Interfaces

Wednesday Evening Tutorial

The Wed Tutorial will shed light on a single topic in depth, particularly benefiting students and newcomers to the field.

• Prof. Shinichi Takagi, U. Tokyo, Japan
  Hafnia-Based Ferroelectric FETs and Capacitors for Low-Power Memory and AI Applications: Physical Understanding of Device Operation and Reliability

A Best Student Presentation Award will be given in memory of E. H. Nicollian, who made many important contributions to the field and had a strong presence within the SISC.

A Best Poster Award will be given in memory of T. P. Ma.

Abstract submission is now open!
Deadline: July 22, 2024

You can also download the Call in the PDF format. Please help us promote SISC among your colleagues and collaborators by forwarding the Call to them and by posting a hard copy at your affiliation.

For questions about the SISC focus, abstract submission, and related issues, please contact the Technical Program Chair.