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The SISC Ed Nicollian Award for best student
paper was established in 1995 in honor of Professor E.H. Nicollian,
University of North Carolina at Charlotte. Professor Nicollian was
a pioneer in the exploration of the metal-oxide-semiconductor system,
particularly in the area of electrical measurements. His efforts
were fundamental to establishing the SISC in its early years, and he served as
its technical program chair in 1982. With John Brews, he wrote the
definitive book, "MOS Physics and Technology", published by Wiley
Interscience.
Past Winners of the SISC Ed Nicollian
Award
2023
Rehan Younas
U. Notre Dame
“Ferromagnetism in Tungsten Diselenide and the Role of Selenium Vacancies”
with G. Zhou, X. Liu, S. Tiwari (UT Dallas), W. G. Vandenberghe (UT Dallas), B. Assaf, and C. L. Hinkle |
2022
Jiaqi Chen
University of Cambridge, UK
“Ambipolar Contacts at WSe2/Metal via Moire Interface
Transistors”
with Z. Zhang, Y. Guo, and J. Robertson |
2021
Nujhat Tasneem
Georgia Institute of Technology
“Charge Trapping Effects on Memory Window in Ferroelectric Field Effect
Transistors”
with Z. Wang, M. M. Islam, S. F. Lombardo, H. Chen, J. Hur, S. Yu,
W. Chern, and A. Khan |
2020
John Wright
Cornell University
“Electronic properties of epitaxial NbN/GaN interfaces”
with G. Khalsa, T. Yu, V. Strocov, H. G. Xing, and D. Jena |
2019
Abhinav Gaur
imec, Belgium
“A novel MX2 MOS capacitor model to investigate CVD MoS2 - SrTiO3 interface”
with B. Groven, M. Popovici, D. H. C. Lin, I.Asselberghs, M. Heyns, and I. Radu |
2018
Guanyu Zhou
University of Texas at Dallas
“High-Mobility (> 700 cm2/V-s) Helical Tellurium Field Effect Transistors Enabled by Transfer-Free, Low-Temperature (120 °C) Direct Growth”
with R. Addou, Q. Wang, S. Honari, C. R. Cormier, L. Cheng, R. Yue, C. M. Smyth, A. Laturia, J. Kim, W. G. Vandenberghe, M. J. Kim, R. M. Wallace, and C. L. Hinkle |
2017
Mahmut Sami Kavrik
UCSD
“Ultra-Low Defect Density sub 0.5 nm HfO2/SiGe Interface Formation via Al Gettering Gate”
with E. Thomson, E. Chagarov, A. Betts, K. Tang , P. C. McIntyre, Q. Wang, M. Kim, and A. C. Kummel |
2016
Chris M. Smyth
University of Texas at Dallas
“Contacts on WSe2: Interface Chemistry and Band Alignment”
with R. Addou, S. McDonnell, J. Kim, C. L. Hinkle, and R. M. Wallace |
2015
Julien Borrel
STMicroelectronics / CEA-LETI / IEMN, France
“At 10nm node, what is the AC impact of dielectric insertions in contact initially meant to decrease the DC contact resistivity?”
with L. Hutin, O. Rozeau, M.-A. Jaud, S. Martinie, E. Dubois, and M. Vinet |
2014
Adam Barton
University of Texas at Dallas
“HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by MBE”
with R. Yue, S. McDonnell, R. Addou, A. Azcatl, H. Zhu, L. Ning, X. Peng, L. Colombo, J. Kim, M. Kim, R. M. Wallace, and C. L. Hinkle |
2013
Heng Wu
Purdue University
“Ultra-scaled Junctionless MOSFETs on GeOI Substrates”
with X. F. Li, L. Dong, J. J. Gu, N. J. Conrad, J. Y. Zhang, and P. D. Ye |
2012
Jiangjiang Gu
Purdue University
“Performance and Variability Breakthrough for LaAlO3/InGaAs Gate-all-around Nanowire MOSFETs with Ultra-thin Al2O3 Passivation”
with P. D. Ye |
2011
Suyog Gupta
Stanford University
“Atomic Layer Deposition of Al2O3 on GeSn and Impact of Wet Chemical Surface Pre-Treatment”
with R. Chen, J. Harris, and K.C. Saraswat |
2010
Fei Xue
University of Texas at Austin
“InAs and In0.7Ga0.3As buried channel MOSFETs with ALD gate dielectrics”
with H. Zhao, Y. Chen, Y. Wang, F. Zhou, and J. Lee |
2009
Jacopo Franco
imec, Belgium
“Impact of Si-Passivation Thickness and Processing on NBTI Reliability of Ge and SiGe pMOSFETs”
with B. Kaczer, A. Stesmans, V. V. Afanas'ev, K. Martens, M. Aoulaiche, T. Grasser, J. Mitard, and G. Groeseneken |
2008
Marko Milojevic
University of Texas at Dallas
“In-situ XPS investigation of the “clean-up” effect through half-cycle ALD reactions on III-V substrates”
with B. Brennan, F. S. Aguirre-Tostado, C. Hinkle, H. C. Kim, B. Lee, G. Hughes, E. M. Vogel, J. Kim, and R. M. Wallace |
2007
Stanislav Markov
University of Glasgow, UK
“Band-gap and permittivity change at high-k gate stack interfaces — device perspective”
with S. Roy, C. Fiegna, E. Sangiorgi, and A. Asenov |
2006
Laurent Thevenod
CEA-LETI/MINATEC, France
“Characterization of TiN/HfO2/SiO2 MOSFETs by extracting mobility from magnetoresistance measurements”
with M. Cassé, W. Desrat, M. Mouis, G. Reimbold, and F. Boulanger |
2005
Frank C. Yeh
Yale University
“SONOS-type Non-volatile Memory with All Silicon Nitride Dielectric Stack”
with Y. X. Liu, X. W. Wang, and T.P. Ma |
2004
Miaomiao Wang
Yale University
“Tunneling Spectroscopy Study of Traps in MOS Structures with
High-k Gate Dielectrics”
with W. He and T.P. Ma |
2003
Mike J. Hale
UCSD
“Oxygen and Oxide Bonding on GaAs(001)- c(2x8)/(2x4): An Atomic
Understanding of Fermi Level Pinning and Unpinning”
with J. Z. Sexton, S. I. Yi, D. L. Winn,
M. Passlack (Motorola), and A. C. Kummel |
2002
Wenjuan Zhu
Yale University
“Mobility extraction for MOSFET's made with ultra-thin high-k
dielectrics: correct accounting of channel carriers”
with T.P. Ma, T. Tamagawa, and W.Y. Wang |
2001
Thomas Kauerauf
imec, Belgium
“Low Weibull slope of breakdown distributions in high-k layers”
with R. Degraeve, C. Soens, G. Groeseneken, and E. Cartier (IBM/imec) |
2000
Z. J. Luo
Yale University
“Characterization of Ultra-thin (~1nm) Zr Silicate for CMOS
Gate Application”
with T.P. Ma, E. Cartier, M. Copel, T. Tamagawa, and
B. Halpern |
1999
Shigayasu Uno
Osaka University, Japan
“I-V Characteristics of Ultra Thin Oxide Films after Soft Breakdown”
with T. Sakura, Y. Kamakura, and K. Taniguchi |
1998
M. K. Das
Purdue University
“Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs”
with J.A. Cooper, Jr., M.R. Melloch,
and M.A. Capano |
1997
Tanya Nigam
imec, Belgium
“Is the Constant Current Charge-to- Breakdown Test Still a
Valid Tool to Study the Reliability of MOS Structures?”
with R. Degraeve, G. Groeseneken, and M. Heyns |
1996
Jan De Blauwe
imec, Belgium
“Degradation and Nitridation Dependence of Steady-State SILC”
with R. Degraeve, R. Bellens, J. Van Houdt, G. Groesenenken,
and H.E. Maes |
1995
K. A. Ellis
Cornell University
“Gas Phase Chemistry of N2O Furnace Oxidation”
with R.A. Buhrman |
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