49th IEEE Semiconductor Interface Specialists Conference
Catamaran Resort Hotel, San Diego, CA
December 5 - 8, 2018 (Tutorial: Dec 5)

The SISC Ed Nicollian Award for best student paper was established in 1995 in honor of Professor E.H. Nicollian, University of North Carolina at Charlotte. Professor Nicollian was a pioneer in the exploration of the metal-oxide-semiconductor system, particularly in the area of electrical measurements. His efforts were fundamental to establishing the SISC in its early years, and he served as its technical program chair in 1982. With John Brews, he wrote the definitive book, "MOS Physics and Technology", published by Wiley Interscience.


Past Winners of the SISC Ed Nicollian Award

Mahmut Sami Kavrik
“Ultra-Low Defect Density sub 0.5 nm HfO2/SiGe Interface Formation via Al Gettering Gate”
with E. Thomson, E. Chagarov, A. Betts, K. Tang , P. C. McIntyre, Q. Wang, M. Kim, and A. C. Kummel
Chris M. Smyth
UT Dallas
“Contacts on WSe2: Interface Chemistry and Band Alignment”
with R. Addou, S. McDonnell, J. Kim, C. L. Hinkle, and R. M. Wallace
Julien Borrel
STMicroelectronics / CEA-LETI / IEMN, France
“At 10nm node, what is the AC impact of dielectric insertions in contact initially meant to decrease the DC contact resistivity?”
with L. Hutin, O. Rozeau, M.-A. Jaud, S. Martinie, E. Dubois, and M. Vinet
Adam Barton
UT Dallas
“HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by MBE”
with R. Yue, S. McDonnell, R. Addou, A. Azcatl, H. Zhu, L. Ning, X. Peng, L. Colombo, J. Kim, M. Kim, R. M. Wallace, and C. L. Hinkle
Heng Wu
Purdue University
“Ultra-scaled Junctionless MOSFETs on GeOI Substrates”
with X. F. Li, L. Dong, J. J. Gu, N. J. Conrad, J. Y. Zhang, and P. D. Ye
Jiangjiang Gu
Purdue University
“Performance and Variability Breakthrough for LaAlO3/InGaAs Gate-all-around Nanowire MOSFETs with Ultra-thin Al2O3 Passivation”
with P. D. Ye
Suyog Gupta
Stanford University
“Atomic Layer Deposition of Al2O3 on GeSn and Impact of Wet Chemical Surface Pre-Treatment”
with R. Chen, J. Harris, and K.C. Saraswat
Fei Xue
University of Texas at Austin
“InAs and In0.7Ga0.3As buried channel MOSFETs with ALD gate dielectrics”
with H. Zhao, Y. Chen, Y. Wang, F. Zhou, and J. Lee
Jacopo Franco
“Impact of Si-Passivation Thickness and Processing on NBTI Reliability of Ge and SiGe pMOSFETs”
with B. Kaczer, A. Stesmans, V. V. Afanas'ev, K. Martens, M. Aoulaiche, T. Grasser, J. Mitard, and G. Groeseneken
Marko Milojevic
University of Texas at Dallas
“In-situ XPS investigation of the “clean-up” effect through half-cycle ALD reactions on III-V substrates”
with B. Brennan, F. S. Aguirre-Tostado, C. Hinkle, H. C. Kim, B. Lee, G. Hughes, E. M. Vogel, J. Kim, and R. M. Wallace
Stanislav Markov
University of Glasgow
“Band-gap and permittivity change at high-k gate stack interfaces — device perspective”
with S. Roy, C. Fiegna, E. Sangiorgi, and A. Asenov
Laurent Thevenod
“Characterization of TiN/HfO2/SiO2 MOSFETs by extracting mobility from magnetoresistance measurements”
with M. Cassé, W. Desrat, M. Mouis, G. Reimbold, and F. Boulanger
Frank C. Yeh
Yale University
“SONOS-type Non-volatile Memory with All Silicon Nitride Dielectric Stack”
with Y. X. Liu, X. W. Wang, and T.P. Ma
Miaomiao Wang
Yale University
“Tunneling Spectroscopy Study of Traps in MOS Structures with High-k Gate Dielectrics”
with W. He and T.P. Ma
Mike J. Hale
“Oxygen and Oxide Bonding on GaAs(001)- c(2x8)/(2x4): An Atomic Understanding of Fermi Level Pinning and Unpinning”
with J. Z. Sexton, S. I. Yi, D. L. Winn,
M. Passlack (Motorola), and A. C. Kummel
Wenjuan Zhu
Yale University
“Mobility extraction for MOSFET's made with ultra-thin high-k dielectrics: correct accounting of channel carriers”
with T.P. Ma, T. Tamagawa, and W.Y. Wang
Thomas Kauerauf
“Low Weibull slope of breakdown distributions in high-k layers”
with Robin Degraeve, Charlotte Soens, Guido Groeseneken, and Eduard Cartier (IBM/IMEC)
Z. J. Luo
Yale University
“Characterization of Ultra-thin (~1nm) Zr Silicate for CMOS Gate Application”
with T.P. Ma, E. Cartier, M. Copel, T. Tamagawa, and B. Halpern
Shigayasu Uno
Osaka University
“I-V Characteristics of Ultra Thin Oxide Films after Soft Breakdown”
with T. Sakura, Y. Kamakura, and K. Taniguchi
M. K. Das
Purdue University
“Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs”
with J.A. Cooper, Jr., M.R. Melloch,
and M.A. Capano
Tanya Nigam
“Is the Constant Current Charge-to- Breakdown Test Still a Valid Tool to Study the Reliability of MOS Structures?”
with R. Degraeve, G. Groeseneken, and M. Heyns
Jan De Blauwe
“Degradation and Nitridation Dependence of Steady-State SILC”
with R. Degraeve, R. Bellens, J. Van Houdt, G. Groesenenken, and H.E. Maes
K. A. Ellis
Cornell University
“Gas Phase Chemistry of N2O Furnace Oxidation”
with R.A. Buhrman